Xl. Guo et al., Fabrication and optoelectronic properties of a transparent ZnO homostructural light-emitting diode, JPN J A P 2, 40(3A), 2001, pp. L177-L180
A transparent ZnO homostructural light-emitting diode (LED) with a structur
e of Au electrode/p(i)-ZnO film/n-ZnO single crystal/In electrode was fabri
cated using the technique of N2O plasma-enhanced pulsed laser reactive depo
sition. The contact between the p(i)-ZnO layer and n-ZnO wafer was found to
exhibit nonlinear and rectifying current-voltage (I-V) characteristics. A
current injection emission with bluish-white light was clearly observed at
room temperature, and its intensity increased with increases in the injecte
d electric current.