Self-diffusion in extrinsic silicon using isotopically enriched Si-30 layer

Authors
Nakabayashi, Y Osman, HI Segawa, T Saito, K Matsumoto, S Murota, J Wada, K Abe, T
Citation
Y. Nakabayashi et al., Self-diffusion in extrinsic silicon using isotopically enriched Si-30 layer, JPN J A P 2, 40(3A), 2001, pp. L181-L182
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
40
Issue
3A
Year of publication
2001
Pages
L181 - L182
Database
ISI
SICI code
Abstract
Si self-diffusion coefficients were measured in intrinsic and extrinsic sil icon at 900 degreesC using an isotopically enriched Si-30 layer. Si-30 prof iles are determined by secondary ion mass spectrometry, Si self-diffusion i s enhanced in a heavily B-doped sample, but differs little from intrinsic S i in heavily As or Sb-doped samples.