The influence of illumination intensity and residual gases on the stability
of negative electron affinity GaAs (Cs,O) photocathodes during operation w
as investigated in the present work. A comparison was made between the stab
ility of photocathodes installed in activation chamber and tube body. Studi
es of the activated GaAs photocathode surface and the surface of GaAs photo
cathode with sensitivity decaying to zero were made using Auger electron sp
ectroscopy. It was found that the degradation of GaAs photocathodes stems m
aingly from the interaction of harmful residual gases and photocathode surf
ace.