About the possible diminution of the sp(3) C presence along with the increase of the nitrogen enclosure in the CNx thin films produced by reactive pulsed laser deposition

Authors
Gyorgy, E Mihailescu, IN Baleva, M Trifonova, EP Abrashev, M Darakchieva, V Zocco, A Perrone, A
Citation
E. Gyorgy et al., About the possible diminution of the sp(3) C presence along with the increase of the nitrogen enclosure in the CNx thin films produced by reactive pulsed laser deposition, J MATER SCI, 36(8), 2001, pp. 1951-1956
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE
ISSN journal
00222461 → ACNP
Volume
36
Issue
8
Year of publication
2001
Pages
1951 - 1956
Database
ISI
SICI code
0022-2461(200104)36:8<1951:ATPDOT>2.0.ZU;2-9
Abstract
We report herewith new experimental data concerning the synthesis of carbon -nitride thin films by reactive pulsed laser deposition (lambda = 248 nm, t au (FWHM) less than or equal to 30 ns) from a graphite target in low pressu re nitrogen (0.2, 1 and 50 Pa) at a level of the incident laser fluence of 22 J/cm(2). The obtained structures were studied by Raman spectrometry and microhardness determinations. We have observed that an increase of the N-2 pressure leads to an increase in the N-2 content in the deposited films but causes the reduction of the amount of the sp(3) bounded C and the decrease of the microhardness of the obtained structures. (C) 2001 Kluwer Academic Publishers.