L. Bakueva et al., Electronic properties of semiconducting poly(ferrocenylsilane) thin films with vapor-phase iodine diffusion doping, J MAT S-M E, 12(1), 2001, pp. 21-25
We report diffusion doping of the semiconducting polymer poly (ferrocenylsi
lanes), or PFS. We have obtained a steady-state conductivity change of grea
ter than eight orders of magnitude effected through iodine vapor doping of
PFS. The sign of thermoelectric power measurements indicates p-type conduct
ivity. The conductivity exhibits an activation energy of DeltaE = (0.45-0.6
5) eV for moderately-doped samples and DeltaE = (0.8-0.99) eV for heavily-d
oped samples. We report sample photoconductivity, which we find to be princ
ipally of bolometric origin. We also study the evolution of electrical prop
erties over time: during several days after fabrication, the samples exhibi
t an irreversible decrease in conductivity which may be attributable to par
tial iodine desorption. After this aging process, especially noticeable in
heavily doped material, the sample properties stabilize, suggesting promise
in a range of prospective device applications. (C) 2001 Kluwer Academic Pu
blishers.