Polymer light-emitting devices based on plasma-polymerized benzene and plasma-polymerized naphthalene

Authors
Citation
C. Seoul et Wj. Song, Polymer light-emitting devices based on plasma-polymerized benzene and plasma-polymerized naphthalene, J MAT S-M E, 12(1), 2001, pp. 51-55
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN journal
09574522 → ACNP
Volume
12
Issue
1
Year of publication
2001
Pages
51 - 55
Database
ISI
SICI code
0957-4522(200101)12:1<51:PLDBOP>2.0.ZU;2-Y
Abstract
Polymer light-emitting devices (PLED) were fabricated utilizing plasma-poly merized benzene (PPB) and plasma-polymerized naphthalene (PPN) as an electr oluminescent (EL) emitting layer. The plasma polymerization is well suited for forming the transparent, sturdy thin film for EL polymer layers. For th e ITO/PPB/Al and ITO/PPN/Al devices, the turn-on voltage of the device was at 12V and 6V, respectively. The luminance of the PPB device reached 6cdm(- 2) at 10 V, whereas the PPN device reached 11cdm(-2) at 14 V. The external quantum efficency was 0.0035% for the PPB device and 0.0056% for the PPN de vice. The dense crosslinked structure formed by the plasma polymerization m akes the EL device relatively stable during operation. (C) 2001 Kluwer Acad emic Publishers.