C. Seoul et Wj. Song, Polymer light-emitting devices based on plasma-polymerized benzene and plasma-polymerized naphthalene, J MAT S-M E, 12(1), 2001, pp. 51-55
Polymer light-emitting devices (PLED) were fabricated utilizing plasma-poly
merized benzene (PPB) and plasma-polymerized naphthalene (PPN) as an electr
oluminescent (EL) emitting layer. The plasma polymerization is well suited
for forming the transparent, sturdy thin film for EL polymer layers. For th
e ITO/PPB/Al and ITO/PPN/Al devices, the turn-on voltage of the device was
at 12V and 6V, respectively. The luminance of the PPB device reached 6cdm(-
2) at 10 V, whereas the PPN device reached 11cdm(-2) at 14 V. The external
quantum efficency was 0.0035% for the PPB device and 0.0056% for the PPN de
vice. The dense crosslinked structure formed by the plasma polymerization m
akes the EL device relatively stable during operation. (C) 2001 Kluwer Acad
emic Publishers.