Ac. Antunes et al., Effect of La2O3 doping on the microstructure and electrical properties of a SnO2-based varistor, J MAT S-M E, 12(1), 2001, pp. 69-74
The effect of La2O3 addition on the densification and electrical properties
of the (0.9895 - x) SnO2 + 0.01 CoO + 0.0005 Nb2O5 + x La2O5 system, where
x = 0.0005 or 0.00075, was considered in this study. The samples were sint
ered at 1300 degreesC for 2 and 4 h and a single SnO2 phase was identified
by X-ray diffraction. Microstructure analysis by scanning electron microsco
py showed that the affect of La2O3 addition is to decrease the SnO2 grain s
ize. J versus E curves indicated that the system exhibits a varistor behavi
or and the effect of La2O3 is to increase both the non-linear coefficient (
alpha) and the breakdown voltage (E-2). Considering the Schottky thermionic
emission model the potential height and the width were estimated. The addi
tion of small amounts of La2O3 to the basic system increases the potential
barrier height and decreases both grain size and potential barrier width. (
C) 2001 Kluwer Academic Publishers.