Effect of La2O3 doping on the microstructure and electrical properties of a SnO2-based varistor

Citation
Ac. Antunes et al., Effect of La2O3 doping on the microstructure and electrical properties of a SnO2-based varistor, J MAT S-M E, 12(1), 2001, pp. 69-74
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN journal
09574522 → ACNP
Volume
12
Issue
1
Year of publication
2001
Pages
69 - 74
Database
ISI
SICI code
0957-4522(200101)12:1<69:EOLDOT>2.0.ZU;2-#
Abstract
The effect of La2O3 addition on the densification and electrical properties of the (0.9895 - x) SnO2 + 0.01 CoO + 0.0005 Nb2O5 + x La2O5 system, where x = 0.0005 or 0.00075, was considered in this study. The samples were sint ered at 1300 degreesC for 2 and 4 h and a single SnO2 phase was identified by X-ray diffraction. Microstructure analysis by scanning electron microsco py showed that the affect of La2O3 addition is to decrease the SnO2 grain s ize. J versus E curves indicated that the system exhibits a varistor behavi or and the effect of La2O3 is to increase both the non-linear coefficient ( alpha) and the breakdown voltage (E-2). Considering the Schottky thermionic emission model the potential height and the width were estimated. The addi tion of small amounts of La2O3 to the basic system increases the potential barrier height and decreases both grain size and potential barrier width. ( C) 2001 Kluwer Academic Publishers.