Boron isotope effects on the thermoelectric properties of UB4 at low temperatures

Citation
Y. Nishi et al., Boron isotope effects on the thermoelectric properties of UB4 at low temperatures, J NUCL MAT, 294(1-2), 2001, pp. 209-211
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
JOURNAL OF NUCLEAR MATERIALS
ISSN journal
00223115 → ACNP
Volume
294
Issue
1-2
Year of publication
2001
Pages
209 - 211
Database
ISI
SICI code
0022-3115(200104)294:1-2<209:BIEOTT>2.0.ZU;2-B
Abstract
The thermoelectric power and electrical resistivity of UB4 with three diffe rent boron isotope enrichments were measured in the temperature range from 80 to 300 K. The thermoelectric power of each sample decreased with decreas ing temperature, but a slight saturation of the decrease due to phonon-drag effect was observed below 120 K for both boron isotope enriched samples. T he resistivity decreased with decreasing temperature and there existed no l arge difference among the resistivities of natural boron. boron-10 enriched and boron-11 enriched samples. The figure of merit for thermoelectricity o f UB4 was lower by three orders of magnitude than that of well-known thermo electric material (Bi,Sb)(2)(Te, Se)(3). (C) 2001 Elsevier Science B.V. All rights reserved.