The thermoelectric power and electrical resistivity of UB4 with three diffe
rent boron isotope enrichments were measured in the temperature range from
80 to 300 K. The thermoelectric power of each sample decreased with decreas
ing temperature, but a slight saturation of the decrease due to phonon-drag
effect was observed below 120 K for both boron isotope enriched samples. T
he resistivity decreased with decreasing temperature and there existed no l
arge difference among the resistivities of natural boron. boron-10 enriched
and boron-11 enriched samples. The figure of merit for thermoelectricity o
f UB4 was lower by three orders of magnitude than that of well-known thermo
electric material (Bi,Sb)(2)(Te, Se)(3). (C) 2001 Elsevier Science B.V. All
rights reserved.