Estimation of density of localized states of a-Se100-xSbx films using electrical properties

The density of states (DOS) near the Fermi level is calculated using the de conductivity (Mott parameters) and SCLC measurements data. The de conducti vity measurements on thin films of a-Se100-xSbx (x = 0,0.5,2.5, 5 and 10) a re reported in the temperature range (219-375 K). At high temperature (314- 375 K), the conduction occurs in the extended states while at lower tempera ture (219-314 K) the conduction due to variable range-hopping. The I-V meas urements have also been done in a-Se100-xSbx at different electric field. S pace charge limited conduction (SCLC) has also been observed in the present system. (C) 2001 Elsevier Science Ltd. All rights reserved.