Experimental and theoretical study of the electronic structures of Ni3Al, Ni3Ga, Ni3In, and NiGa

Authors
Hsu, LS Nesvizhskii, AI
Citation
Ls. Hsu et Ai. Nesvizhskii, Experimental and theoretical study of the electronic structures of Ni3Al, Ni3Ga, Ni3In, and NiGa, J PHYS CH S, 62(6), 2001, pp. 1103-1109
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
ISSN journal
00223697 → ACNP
Volume
62
Issue
6
Year of publication
2001
Pages
1103 - 1109
Database
ISI
SICI code
0022-3697(200106)62:6<1103:EATSOT>2.0.ZU;2-J
Abstract
The electronic structures of Ni3Al, Ni3Ga, Ni3In, and NiGa are studied by r esonant photoemission spectroscopy (RESPES) and X-ray absorption near-edge spectra (XANES) at the Ni L-2,L-3-edges. The RESPES spectra are explained w ith atomic multiplet model, and the XANES data are compared with those calc ulated with multiple-scattering theory. The number of 3d holes per Ni atom is calculated for Ni3Al, Ni3Ga, and Ni3In. (C) 2001 Elsevier Science Ltd. A ll rights reserved.