Low-temperature growth of vanadium pentoxide thin films produced by pulsedlaser ablation

Authors
Ramana, CV Naidu, BS Hussain, OM Pinto, R
Citation
Cv. Ramana et al., Low-temperature growth of vanadium pentoxide thin films produced by pulsedlaser ablation, J PHYS D, 34(7), 2001, pp. L35-L38
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
34
Issue
7
Year of publication
2001
Pages
L35 - L38
Database
ISI
SICI code
0022-3727(20010407)34:7<L35:LGOVPT>2.0.ZU;2-7
Abstract
Vanadium pentoxide (V2O5) thin films have been produced by pulsed laser dep osition. AFM, Raman, optical and electrical measurements have been made on the films in order to understand the growth mechanism of laser ablated V2O5 thin films. The investigations revealed the growth of stoichiometric and h igh-quality V2O5 thin films at low substrate temperatures. The optical band gap and the electrical conductivity of V2O5 thin films grown at a temperat ure of 200 degreesC at an oxygen partial pressure of 100 mTorr are 2.35 eV and 10(-4) S cm(-1), respectively.