A new intergrowth bismuth layer-structured ferroelectric, Bi2WO6-Bi3TaTiO9
(BW-BTT), was successfully synthesized by solid-state reaction, and the reg
ular intergrowth structure was confirmed by the Rietveld method. Differenti
al thermal analysis measurements suggested that the BW-BTT underwent ferroe
lectric phase transitions twice at around the Curie temperatures of the con
stituent compounds of BW and BTT. The structural analysis of the BW-BTT sho
wed that there are two kinds of Bi ions in the bismuth oxide layers, and th
at one Bi ion was displaced to the polarization direction by about 2% of th
e lattice constant a from the corresponding position in the parent tetragon
al structure. This displacement of Bi in the bismuth oxide layers is the st
ructural feature which was found for the first time for both conventional a
nd intergrowth bismuth layered structures.