Low-temperature Si epitaxial growth on oxide patterned wafers by ultrahighvacuum electron cyclotron resonance chemical vapor deposition

Low-temperature electron cyclotron resonance hydrogen plasma cleaning was d eveloped for low-temperature epitaxial growth of Si by ultrahigh vacuum ele ctron cyclotron resonance chemical vapor deposition on oxide-patterned wafe rs. Defect-free undoped Si epitaxial layers could be obtained by optimizing the hydrogen ion flux and cleaning time, however, in the case of boron-dop ed Si epitaxial growth, Si epilayers had defect zones away from the bird's beak along the window edges and a defect-free zone at the center of the win dow. Cross section transmission electron microscopy and energy dispersive s pectroscopy results suggest that the defect zone formation is closely relat ed with local oxygen contamination. Possible origins of the local oxygen co ntamination are discussed. (C) 2001 American Vacuum Society.