Electrical characteristics of p-n junction diodes fabricated by Si epitaxyat low temperature using sputtering-type electron cyclotron resonance plasma

This article reports the electrical characteristics of p-n junction diodes that were formed by directly depositing a Sb-doped n-type epilayer on a p-t ype substrate by using a de-bias electron cyclotron resonance plasma sputte ring system at a low temperature of 400 degreesC and a conventional vacuum of 5 X 10(-7) Torr. The reverse current density of the n(+) -p junctions di odes depends on deposition gas pressures and substrate biases. The n(+)-p j unction diodes exhibit, under optimum conditions, a reverse current density as low as 9.5X 10(-9) A/cm(2) at a reverse bias voltage of 5 V and an idea lity factor of 1.05. The excellent characteristics of the n+-p junction dio de are due to the integrity of interface between ni epilayer and p-type Si substrate. (C) 2001 American Vacuum Society.