Sidewall passivation of GaAs in BCl3-containing atmospheres

Authors
Franz, G Hosler, W Treichler, R
Citation
G. Franz et al., Sidewall passivation of GaAs in BCl3-containing atmospheres, J VAC SCI B, 19(2), 2001, pp. 415-419
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
19
Issue
2
Year of publication
2001
Pages
415 - 419
Database
ISI
SICI code
1071-1023(200103/04)19:2<415:SPOGIB>2.0.ZU;2-G
Abstract
The sidewall passivation of GaAs in atmospheres containing the chain-buildi ng molecule BCl3 has been investigated employing Auger electron spectroscop y and time-of-flight secondary ion mass spectrometry. It could be proven th at the film that protects the sidewalls from further chemical attack is com posed mainly of (B2Cl4)(proportional to) rather than polymers of B2O3. (C) 2001 American Vacuum Society.