Space-charge effects in projection electron-beam lithography: Results fromthe SCALPEL proof-of-lithography system

In projection electron-beam systems resolution and throughput are linked th rough electron-electron interactions collectively referred to as space-char ge effects. Hence, a detailed understanding of these effects is essential t o optimizing the lithographic performance of a projection electron-beam lit hography system. Although many models have been developed to describe one o r more of the various aspects of the Coulomb interactions that occur in the beam, there is minimal experimental data available. We have performed a se ries of experimental measurements in the scattering with angular limitation projection electron-beam lithography (SCALPEL) proof-of-lithography system to characterize the space-charge effects for such an optical configuration . The results of those measurements have been compared to a combination of computer simulations and analytical models. The agreement between the model s and experiments was good, within the limits of experimental error. We det ermined the exponent in the dependence of blur on beam current to be 1.029 +/- 0.16 (1 sigma), consistent with more recent models. Additionally, we co mment on the use of blur modeling for system optimization. (C) 2001 America n Vacuum Society.