Imprinting three-dimensional patterns directly into electrically conductive
polymer blends is investigated. Silicon substrates are spin-coated by a po
lymethylmethacrylate/polyaniline-camphor sulfonic acid mixture dissolved in
m-cresol. The patterns are imprinted using a silicon stamp having a 500 nm
deep grating with 5 mum wide lines and spaces. The imprinting temperature
was 140 degreesC, pressure 150 bar, and time 10 min. The conductivity of th
e blend was 1 S/cm prior to imprinting and decreased by a factor of about 2
in the process. Removing the residual film from the grooves by etching in
argon/oxygen plasma results in resistance anisotropy larger than 10(4) perp
endicular and parallel to the imprinted polymer ridges. (C) 2001 American V
acuum Society.