Direct measurement of emission current distribution of Spindt-type field emitters

A specially designed Spindt-type emitter array is used to study field emiss ion characteristics of the Spindt-type field emitter. Each pixel in the arr ay contains only one tip, is independently addressable, and is spaced 110 m um from the adjacent pixels. The pixels are electrically and optically dist inguishable from each other. The emission current distribution of 2560 fiel d emitters in an array is directly measured as a function of gate voltage. The ratio of maximum current to minimum current is as high as 100:1. There are two peaks observed in the current distribution. The position of the hig h current peak is strongly dependent on the gate voltage, while the positio n of the low current peak is less sensitive to the gate voltage. The variat ions in beam size and beam position of individual field emitters are also m easured. These variations within individual emitters are partly responsible for large beam size observed in field emission displays with pixels contai ning hundreds of emitters. Change in the current distribution of individual emitters was recorded as the emitters were aging. Statistically, the emitt ers operating at high current age faster than those at low current. (C) 200 1 American Vacuum Society.