Bw. Han et al., Growth of in situ CoSi2 layer by metalorganic chemical vapor deposition onSi tips and its field-emission properties, J VAC SCI B, 19(2), 2001, pp. 533-536
We prepared Si emitters coated with a metalorganic chemical vapor deposited
CoSi2 layer to improve emission properties. The CoSi2 layer was grown in s
itu by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl co
balt at 650 degreesC. The CoSi2 layer was conformally deposited on the Si e
mitter tips and had a twinned structure at the epitaxial CoSi2/Si interface
in the partial region. The CoSi2-coated Si emitters showed an enhanced emi
ssion due to the increase in the number of emitting sites from the Fowler-N
ordheim plot. The fluctuation of emission current was reduced by the CoSi2
coating. But the long-term stability was not much improved, which may be du
e to the decrease of the field enhancement factor and the number of emittin
g sites of the CoSi2-coated Si tip. (C) 2001 American Vacuum Society.