Microtunneling sensors for vacuum level evaluation of field emission display devices

In this article, the laterally tunneling diodes and triodes were fabricated with the general second polysilicon layer surface micromachining process. The thickness of each structural polysilicon and sacrificial phosphosilicat e glass layer was 2 mum, respectively. By removing the sacrificial layer wi th the sublimation drying method, the stiction was avoided. Their emission characteristics were tested in a high vacuum chamber with probes. Current-v oltage characteristics were tested under various vacuum environments and th e simulation was done to know the electric field distribution near the tip end. They were then used as a vacuum level evaluation sensor. The sensor sh owed the emission current variation in the range of 1.20-2.42 muA for the v acuum range of 10(-5)-10(-8) Torr. (C) 2001 American Vacuum Society.