P-type InP grows by liquid phase epitaxy with rare earths: not intentionalGe acceptor doping

Authors
Zdansky, K Zavadil, J Prochazkova, O Gladkov, P
Citation
K. Zdansky et al., P-type InP grows by liquid phase epitaxy with rare earths: not intentionalGe acceptor doping, MAT SCI E B, 80(1-3), 2001, pp. 10-13
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
80
Issue
1-3
Year of publication
2001
Pages
10 - 13
Database
ISI
SICI code
0921-5107(20010322)80:1-3<10:PIGBLP>2.0.ZU;2-D
Abstract
InP single crystal layers were grown by liquid phase epitaxy (LPE) on semi- insulating InP:Fe substrates with praseodymium added to the melt. Room temp erature Hall effect measurements revealed p-type conductivity of the layers with the hole concentration 6 x 10(14) cm(-3) and mobility 150 cm(2) V-1 s (-1). By measuring temperature dependence of the hole concentration the bin ding energy of the dominant acceptor was determined as 223 meV. A photolumi nescence line was found at 1.195 eV, close to the previously estimated no-p honon line of Gs acceptor transitions in Ge doped n-type InP. It was conclu ded that Ge accepters cause the p-type conductivity of the grown layers. (C ) 2001 Elsevier Science B.V. All rights reserved.