Citation
R. Mosca et al., Influence of the As/Ga flux ratio on diffusion of Be in MBE GaAs layers, MAT SCI E B, 80(1-3), 2001, pp. 32-35
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
80
Issue
1-3
Year of publication
2001
Pages
32 - 35
Database
ISI
SICI code
0921-5107(20010322)80:1-3<32:IOTAFR>2.0.ZU;2-L
Abstract
Beryllium (Be) diffusion after rapid thermal annealing experiments is studi
ed in heavily doped GaAs structures grown by MBE. SIMS measurements show th
at in p/p(+) structures, Be diffusion is reduced by increasing the As-4/Ga
flux ratios. In contrast, no effect is observed in p/p(+)/p structures. Fur
thermore, Be concentration profiles measured after annealing experiments pe
rformed at 770 and 850 degreesC for 30 s indicate that Be redistribution is
almost independent of the annealing temperature. These results are discuss
ed in terms of a substitutional interstitial diffusion mechanism. (C) 2001
Elsevier Science B.V. AII lights reserved.