Integrated analytical equipment for control of film growth in MBE technology

Authors
Mikhailov, NN Rykhlitski, SV Spesivtsev, EV Dulin, SA Nazarov, NI Sidorov, YG Dvoretsky, SA
Citation
Nn. Mikhailov et al., Integrated analytical equipment for control of film growth in MBE technology, MAT SCI E B, 80(1-3), 2001, pp. 41-45
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
80
Issue
1-3
Year of publication
2001
Pages
41 - 45
Database
ISI
SICI code
0921-5107(20010322)80:1-3<41:IAEFCO>2.0.ZU;2-#
Abstract
The integrated analytical equipment has been developed for in-situ measurin g growth rate and film composition by the ultra-fast ellipsometer, surface temperature by the polarization-type pyrometer and for precise control over the epitaxial processes by automatic control system. This complex was used to control the mercury cadmium telluride heteroepitaxial structure growth on GaAs substrate with various composition distributions throughout the thi ckness. The maintenance accuracy of Hg1-xCdxTe composition during growth wa s up to DeltaX(CdTe) = +/- 0.0005. The maintenance accuracy of substrate te mperature was found to be up to +/- 1 degreesC. (C) 2001 Elsevier Science B .V. All rights reserved.