Citation
A. Dusch et al., Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation, MAT SCI E B, 80(1-3), 2001, pp. 65-67
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
80
Issue
1-3
Year of publication
2001
Pages
65 - 67
Database
ISI
SICI code
0921-5107(20010322)80:1-3<65:MOTTED>2.0.ZU;2-S
Abstract
We have simulated transient enhanced diffusion (TED) in the presence of end
-of-range (EOR) defects produced by Ge amorphization followed by BF2+ impla
ntation. Ostwald ripening of EOR defects has been taken into account. A com
parison of annealed profiles with equivalent B+ implantation shows that the
existing models are not sufficient to simulate the BF2+ experimental profi
les where the boron diffusion depth is very low. We have proposed that the
presence of fluorine can act as sinks for interstial boron and, hence, redu
ces the boron diffusion depth in order to obtain a good approximation of ex
perimental profiles. (C) 2001 Elsevier Science B.V. All rights reserved.