A model for diffusion of beryllium in InGaAs/InP heterostructures

Authors
Ihaddadene, M Koumetz, S Latry, O Ketata, K Ketata, M Dubois, C
Citation
M. Ihaddadene et al., A model for diffusion of beryllium in InGaAs/InP heterostructures, MAT SCI E B, 80(1-3), 2001, pp. 73-76
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
80
Issue
1-3
Year of publication
2001
Pages
73 - 76
Database
ISI
SICI code
0921-5107(20010322)80:1-3<73:AMFDOB>2.0.ZU;2-T
Abstract
This study reports on Be diffusion from a Be-doped (3 x 10(19) cm(-3)) In0. 53Ga0.47As layer sandwiched between undoped InP layers grown by gas source molecular beam epitaxy. To explain the obtained experimental depth profiles , a kick-out model of substitutional interstitial diffusion mechanism, invo lving neutral Be interstitials for the InGaAs epilayer and singly positivel y charged Be interstitials for the InP epilayers, is proposed. Using the bo undary conditions at the heterojunctions and taking into account the built- in electric field, Fermi level and bulk self-interstitial generation/annihi lation effects, we obtained a good agreement between the simulated and expe rimental data. (C) 2001 Elsevier Science B.V. All rights reserved.