MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL

Authors
Mock, P Booker, GR Mason, NJ Nicholas, RJ Aphandery, E Topuria, T Browning, ND
Citation
P. Mock et al., MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL, MAT SCI E B, 80(1-3), 2001, pp. 112-115
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
80
Issue
1-3
Year of publication
2001
Pages
112 - 115
Database
ISI
SICI code
0921-5107(20010322)80:1-3<112:MGSASI>2.0.ZU;2-6
Abstract
Self-assembled InSb quantum dots (QDs) were grown by metal-organic vapour p hase epitaxy (MOVPE) in a GaSb matrix. Atomic force microscopy (AFM), conve ntional diffraction contrast transmission electron microscopy (CTEM), high resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) were used for the assessment of the QDs. Reductions in the (III)/v, ra tios and growth rates resulted in a change of the morphology of the InSb is lands from hillocks without facets, and a low level of order to dumbbell sh aped islands with distinct facets and a higher level of order. (C) 2001 Pub lished by Elsevier Science B.V.