Electrical and photoelectrical behaviour of CdTe structures

Citation
Zj. Horvath et al., Electrical and photoelectrical behaviour of CdTe structures, MAT SCI E B, 80(1-3), 2001, pp. 156-159
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
80
Issue
1-3
Year of publication
2001
Pages
156 - 159
Database
ISI
SICI code
0921-5107(20010322)80:1-3<156:EAPBOC>2.0.ZU;2-1
Abstract
The electrical and photoelectrical behaviour of Au/n-CdTe junctions prepare d on CdTe monocrystalline substrates and CdTe epitaxial layers grown on n() GaAs substrates were studied, The electrical and photoresponse properties depended very strongly on the parameters of the compensated high-resistive layer at the CdTe surface formed by annealing during preparation. (C) 2001 Elsevier Science B.V. All rights reserved.