Packaging-induced stress distribution in high power AlGaAs laser diodes byphotoluminescence mapping

Authors
Martin, P Landesman, JP Bisaro, R Martin, E Fily, A Hirtz, JP
Citation
P. Martin et al., Packaging-induced stress distribution in high power AlGaAs laser diodes byphotoluminescence mapping, MAT SCI E B, 80(1-3), 2001, pp. 188-192
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
80
Issue
1-3
Year of publication
2001
Pages
188 - 192
Database
ISI
SICI code
0921-5107(20010322)80:1-3<188:PSDIHP>2.0.ZU;2-W
Abstract
The microphotoluminescence (mu -PL) technique is proposed for mapping local stress distribution in GaAs/AlGaAs high power laser diode arrays (LDAs). T his technique will be used to monitor the stresses that can be induced on t he bars during the packaging process. We show herein that also a detailed s tudy of the stress profiles that could exist in the bars before mounting an d after aging can be achieved with this technique. (C) 2001 Published by El sevier Science B.V.