Optimization of III-V compound semiconductor heterostructures for distributed Bragg reflector applications in VCSELs

Authors
Linnik, M Christou, A
Citation
M. Linnik et A. Christou, Optimization of III-V compound semiconductor heterostructures for distributed Bragg reflector applications in VCSELs, MAT SCI E B, 80(1-3), 2001, pp. 245-247
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
80
Issue
1-3
Year of publication
2001
Pages
245 - 247
Database
ISI
SICI code
0921-5107(20010322)80:1-3<245:OOICSH>2.0.ZU;2-B
Abstract
A selectively oxidized vertical cavity surface emitting laser (VCSEL) has b een designed and fabricated for operation at a wavelength of 1.546 mum. The device structure was grown on an InP substrate using III-V quaternary semi conductor alloys for the two mirror stacks and unstrained multi-quantum wel ls for the active layer. A threshold current as low as 2.2 mA has been achi eved. The influence of the intentional, and growth-related compositional gr ading at the heterointerfaces on the mirror reflectivity and laser characte ristics has been investigated, and key sensitivities to laser performance h ave been determined. (C) 2001 Published by Elsevier Science B.V.