Engineered Schottky barriers on n-In0.35Ga0.65As

Authors
Horvath, ZJ Van Tuyen, V Franchi, S Bosacchi, A Frigeri, P Gombia, E Mosca, R Pal, D Kalmar, I Szentpali, B
Citation
Zj. Horvath et al., Engineered Schottky barriers on n-In0.35Ga0.65As, MAT SCI E B, 80(1-3), 2001, pp. 248-251
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
80
Issue
1-3
Year of publication
2001
Pages
248 - 251
Database
ISI
SICI code
0921-5107(20010322)80:1-3<248:ESBON>2.0.ZU;2-8
Abstract
The Schottky barrier height in Al/n-In0.35Ga0.65As was engineered using thi n p-type near-interface In0.35Ga0.65As layers grown by molecular beam epita xy. The effect of the thickness and doping level of the p-type layer on the barrier height was also studied by computer simulation. A good agreement w as obtained between the calculated and experimental barrier height values. An experimental Schottky barrier height of 0.67 eV with an ideality factor of 1.15 has been achieved. (C) 2001 Elsevier Science B.V. All rights reserv ed.