Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability

We report the result of investigation on hydrogen effects on GaInP/GaAs HBT structures originating from different MOCVD and CBE suppliers. It is demon strated that hydrogen gives rise to initial unstable electrical behaviour b y cross-examination of samples with and without hydrogen either intrinsical ly or by thermal-assisted removal. Annealing conditions to remove hydrogen have been optimized on the basis of SIMS analyses and Gummel plot character istics to control eventual degradation of the junctions. It has been found that under particular eloping and growth conditions; C-2-H complexes can be formed. These defects appear more stable than C-H complexes which may expl ain the difficulty to remove hydrogen from some epitaxial layers. (C) 2001 Elsevier Science B.V. All rights reserved.