Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p(+)GaAs base layers

in this work we have examined the effect of RF annealing (450-750 degreesC, 5-30 min) upon both InGaP/GnAs-based hetero-junction bipolar transistor (H BT) structures, fabricated by metalorganic vapour phase epitaxy (MOVPE), as well as thick carbon (C)-doped p(+)GaAs HBT base layers with varying layer thickness, dopant level and type (intrinsic and extrinsic C precursors) an d co-doping (In) strain compensation. Anneal-induced changes in the p(+)GaA s layer lattice strain, Hall carrier concentration and mobility were compar ed with non-radiative losses, determined from photoluminescense (PL intensi ty data. Majority and minority carrier property differences were also compa red with IR reflection, Raman backscattering and photoreflectance (PR) data and correlated with changes in MOVPE hydrogen background concentration as determined by secondary-ion-mass-spectroscopy (SIMS). Thick base layer (1.3 mum) HBT structures were also examined for different anneal temperatures a nd time, showing significant changes in the PR emitter(InGaP)/base (p(+)GaA s) and base/collector (n-GaAs) interface regions for the 650 degreesC annea l condition, as correlated with both PL and SIMS hydrogen concentration dat a. (C) 2001 Elsevier Science B.V. All rights reserved.