Study of structural defects limiting the luminescence of InGaN single quantum wells

Authors
Cremades, A Piqueras, J Albrecht, M Stutzmann, M Strunk, HP
Citation
A. Cremades et al., Study of structural defects limiting the luminescence of InGaN single quantum wells, MAT SCI E B, 80(1-3), 2001, pp. 313-317
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
80
Issue
1-3
Year of publication
2001
Pages
313 - 317
Database
ISI
SICI code
0921-5107(20010322)80:1-3<313:SOSDLT>2.0.ZU;2-C
Abstract
InGaN quantum well (QW) structures with different thicknesses have been cha racterised by means of cathodoluminescence (CL) in the scanning electron mi croscope and transmission electron microscopy (TEM), in order to study the structural defects that limit the device operation, Misfit dislocations app ear as non-radiative centres in the CL images and compete with the quantum- well related luminescence. The luminescence red shift with increasing QW th ickness has been found to be influenced by composition fluctuations. (C) 20 01 Elsevier Science B.V. All rights reserved.