Deposition, evaluation and control of 4H and 6H SiC epitaxial layers for device applications

We report an experimental investigation of the deposition, optical characte rization and electrical properties of 6H and 4H-SiC epitaxial layers grown by atmospheric pressure chemical vapor deposition in a home made 'cold wall ' reactor. From a growth kinetic study performed using our deposition condi tions (1 atm, 1700 K) we show that our results call br very well explained using a stagnant layer model. We also underline that the decrease of the gr owth efficiency for high molar fractions of silane comes from the occurrenc e of a gaseous phase nucleation. The electronic properties of the resulting layers have been Studied by Hall effect measurements. The values of electr ons mobility (900 cm(2) Vs (-1) for a low doped layer) compare well with th ose of other groups. Finally, Schottky diodes have been processed with good forward characteristics. (C) 2001 Published by Elsevier Science B.V.