Study on the degradation induced by donor interface state in deep-sub-micron grooved-gate P-channel MOSFET's

The degradation of electrical performance induced by interface states is on e main reason for failure occurs in deep-sub-micron MOS devices, Especially for grooved-gate MOS devices, there are a large amount of interface states and flaw formed during the etching of concave. Based on the hydrodynamics energy transport model, using MEDICI simulator, the degradation induced by donor interface states is analyzed for deep-sub-micron grooved-gate PMOSFET 's with different channel doping densities and compared with that of corres ponding conventional planar PMOSFET's. The results also compared with that of degradation induced by acceptor interface states. The simulation results indicate that the degradation induced by same interface state density in g rooved-gate PMOSFET's is larger than that in planar PMOSFET's, and in both structure devices, the impact of electron donor interface states on device performance is far larger than that of hole donor interface state. This wor k gives an useful insight of mechanism of hot-carrier degradation for groov ed gate MOS devices and lays a solid foundation for grooved gate devices us ed in deep-sub-micron region VLSI practically. (C) 2001 Elsevier Science Lt d. All rights reserved.