Determination of trap cross-section in a-Si : H p-i-n diodes parameters using simulation and parameter extraction

Modeling the current density-voltage (J-V) curve of a-Si:H p-i-n diodes req uires a group of input physical parameters that have to be previously deter mined. Some of them can be determined directly from experiment, while other s. as the trap cross-section, have to be indirectly determined or assigned. We prc:sent a simple procedure to estimate trap cross-section using comput er simulation and parameter extraction. The experimental J-V forward charac teristic of the p-i-n diode, dark and illuminated, is used to determine the ideality factor n and the short circuit current density J(SC). The charged trap cross-section and its relation to the neutral trap cross-section are determined by fitting to tabulated and graphical results from simulation. D etermined values of trap cross-section are used to simulate the reverse cur rent of diodes under illumination and results compared with experimental cu rves. (C) 2001 Elsevier Science Ltd. All rights reserved.