Angular dependence for the energy loss of channeled He ions near the Si < 110 > and < 111 > directions

In the present work, we report on measurements of angular dependent energy loss for 1.2 and 2.0 MeV He ions incident near the Si <1 1 0 > and <1 1 1 > axes parallel to the {1 00} and {1 1 0} planes, respectively. The measurem ents were done using the Rutherford backscattering technique (RBS) combined with a SIMOX sample. The experimental results are well reproduced by calcu lations based on the convolution approximation for the impact-parameter dep endence of the energy loss of the core electrons. (C) 2001 Elsevier Science B.V. All rights reserved.