Influence of a chromium ion implantation on the passive behaviour of nickel in artificial sea-water: An EIS and XPS study

Citation
P. Girault et al., Influence of a chromium ion implantation on the passive behaviour of nickel in artificial sea-water: An EIS and XPS study, NUCL INST B, 174(4), 2001, pp. 439-452
Citations number
26
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
174
Issue
4
Year of publication
2001
Pages
439 - 452
Database
ISI
SICI code
0168-583X(200105)174:4<439:IOACII>2.0.ZU;2-7
Abstract
The passive behaviour in artificial sea-water of Cr-implanted (4 x 10(16) i ons/cm(2), 60 keV) and non-implanted Ni was studied at room temperature by electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectr oscopy (SPS). The transfer resistance obtained for the implanted specimen ( R-t similar to 5586 k Omega cm(2)) is extremely enhanced compared to the co rresponding value of the non-implanted Ni (R-t similar to 94 k Omega cm(2)) indicating a considerable increase in the protective efficiency of the imp lanted layer. The EIS spectra of ion-implanted Ni exhibit one capacitance l oop while in the non-implanted Ni two distinct loops can be observed. These changes in EIS behaviour by the ion-implantation are related to the increa se of the superficial layer density resulting in a more stable passive laye r. Equivalent circuits were proposed to fit the impedance spectra and corre sponding electrochemical parameters deduced. These findings were compared w ith the results obtained by analysis of the passive film formed on Ni, perf ormed by XPS, and with previous investigations of similar alloys. It appear s that the passive film formed on Ni consists of NiO and Ni(OH)(2) whereas the chromium implantation leads to the formation in the passive state of Cr oxides and hydroxides which are responsible of the large increase of the t ransfer resistance. (C) 2001 Elsevier Science B.V. All rights reserved.