Control of initial growth processes of epitaxial films using pulsed molecular beams - art. no. 153404

Citation
T. Shimada et al., Control of initial growth processes of epitaxial films using pulsed molecular beams - art. no. 153404, PHYS REV B, 6315(15), 2001, pp. 3404
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6315
Issue
15
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010415)6315:15<3404:COIGPO>2.0.ZU;2-A
Abstract
Kinetics of epitaxial thin film growth was analyzed from the experiments us ing pulsed organic molecular beams. It was found that a minimum appears in the nucleation density as a function of on-off cycle time when the substrat e temperature is near the threshold between growth and reevaporation. This feature can be explained by assuming desorption of molecules induced by mut ual collision on the surface, for which orientation-sensitive intermolecula r forces are responsible.