X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films - art. no. 155310

A model has been developed to describe x-ray scattering from CuPt-type orde red III-V ternary semiconductor alloys. The model takes into account the si ze distribution of the two different laminae-shaped variants, the random di stribution of antiphase domain boundaries in each variant, and the atomic d isplacements due to the bond-length difference between the two constitutive binary materials. A synchrotron x-ray source was employed to measure the w eak-ordering reflections from CuPt-ordered Ga0.5In0.5P and Al0.5In0.5As sam ples. By comparing the experimental results and the model calculations, str ucture information, including the average number of atomic layers in the la minae of each variant, the average antiphase domain size, and the average o rder parameter in each variant, were obtained. Results from single-variant films and poorly ordered films are also discussed.