Biexciton binding energy and exciton-LO-phonon scattering in ZnSe quantum wires - art. no. 155311

The dependence of the biexciton binding energy and of the exciton-LO-phonon scattering rate on the wire width is investigated in wet-etched ZnSe quant um wires by temperature-dependent transient four-wave mixing. We observe an increase of the biexciton binding energy with decreasing wire width, reach ing an enhancement of about 30% in the smallest wire structure. In addition , we find a decrease of the exciton-LO-phonon scattering rate with decreasi ng wire size, which is discussed with consideration of the reduced polarity of the exciton wave function and the modified density of final states in n arrow wire structures.