Structural and electronic properties of ZnSe/AlAs heterostructures - art. no. 155312

Pseudomorphic ZnSe/AlAs(001) heterostructures were fabricated by molecular beam epitaxy on GaAs wafers. Intrinsic stacking faults on {111} planes orig inating at the II-VI/III-V interface and propagating throughout the II-VI o verlayer were the main type of native defects observed. The interface termi nation was varied by adsorption of Zn or Se onto the AlAs(001) 3 X 1 surfac e prior to ZnSe growth. The resulting large changes in interface compositio n and band discontinuities mirror those obtained by employing Zn- or Se-ric h growth conditions in the early stages of heterojunction fabrication. Band offsets calculated from first principles for ZnSe/GaAs, when rescaled by t he different magnitude of the electrostatic interface dipole, yield a range of predictions in good agreement with experiment fur ZnSe/AlAs.