Xenon irradiation of Ni3N/Si bilayers: Surface roughening and interface mixing and reactions - art. no. 155411

The irradiation effects in Ni3N/Si bilayers induced by 100-700 keV Xe ions at fluences up to 4 X 10(16) ions/cm(2) were investigated at 80 K and room temperature. The element depth profiles were measured via Rutherford backsc attering (Ni,Si) and resonant nuclear reaction (N) analysis, the phase form ation at the interface via x-ray diffraction, and the surface roughness by atomic force microscopy. The observed dissociation and preferential sputter ing of Ni3N followed by nitrogen out-diffusion were related to the small bi nding energy of this compound. Mixing at the Ni3N/Si interface occurs via a combination of diffusion and reaction controlled transport processes and t he interface broadening varies in second order with the ion fluence. At hig her ion fluences, the formation of NiSi2 and Si3N4 phases at the interface was found.