New source of stacking faults in heteroepitaxial systems

Authors
Lim, SH Shindo, D
Citation
Sh. Lim et D. Shindo, New source of stacking faults in heteroepitaxial systems, PHYS REV L, 86(17), 2001, pp. 3795-3798
Citations number
24
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
86
Issue
17
Year of publication
2001
Pages
3795 - 3798
Database
ISI
SICI code
0031-9007(20010423)86:17<3795:NSOSFI>2.0.ZU;2-I
Abstract
A new stacking fault formation mechanism has been observed for the first ti me in ZnO/LiTaO3 heteroepitaxial films. Nigh resolution electron microscopy studies combined with electron diffraction and numerical image computation suggest that the observed type II intrinsic stacking faults in an epitaxia l film can be dominantly formed as a result of tilting of the lattices betw een films and substrate required to maintain a particular orientation relat ionship.