Mobility-dependent charge injection into an organic semiconductor

Citation
Yl. Shen et al., Mobility-dependent charge injection into an organic semiconductor, PHYS REV L, 86(17), 2001, pp. 3867-3870
Citations number
35
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
86
Issue
17
Year of publication
2001
Pages
3867 - 3870
Database
ISI
SICI code
0031-9007(20010423)86:17<3867:MCIIAO>2.0.ZU;2-M
Abstract
Measurements of charge injection from indium tin oxide (ITO) into the organ ic semiconductor, tetraphenyl diamine doped polycarbonate (PC:TPD), were ca rried out. The current injected at the contact was measured as a function o f the hole mobility in the organic semiconductor, which was varied from 10( -6) to 10(-3) cm(2)/V.s by adjusting the concentration of the hole transpor t agent, TPD, in the PC host. These experiments reveal that the current inj ected at the contact is proportional to the hole mobility in the bulk. As a result, the ITO/PC:TPD contact is found to limit current flow in all sampl es, regardless of the hole mobility in PC:TPD.