Measurements of charge injection from indium tin oxide (ITO) into the organ
ic semiconductor, tetraphenyl diamine doped polycarbonate (PC:TPD), were ca
rried out. The current injected at the contact was measured as a function o
f the hole mobility in the organic semiconductor, which was varied from 10(
-6) to 10(-3) cm(2)/V.s by adjusting the concentration of the hole transpor
t agent, TPD, in the PC host. These experiments reveal that the current inj
ected at the contact is proportional to the hole mobility in the bulk. As a
result, the ITO/PC:TPD contact is found to limit current flow in all sampl
es, regardless of the hole mobility in PC:TPD.