Gs. Solomon et al., Single-mode spontaneous emission from a single quantum dot in a three-dimensional microcavity, PHYS REV L, 86(17), 2001, pp. 3903-3906
The spontaneous emission from an isolated semiconductor quantum dot state h
as been coupled with high efficiency to a single, polarization-degenerate c
avity mode. The InAs quantum dot is epitaxially formed and embedded in a pl
anar epitaxial microcavity, which is processed into a post of submicron dia
meter. The single, quantum dot spontaneous emission lifetime is reduced fro
m the noncavity value of 1.3 ns to 280 Fs, resulting in a single-mode spont
aneous emission coupling efficiency of 78%.