Single-mode spontaneous emission from a single quantum dot in a three-dimensional microcavity

Citation
Gs. Solomon et al., Single-mode spontaneous emission from a single quantum dot in a three-dimensional microcavity, PHYS REV L, 86(17), 2001, pp. 3903-3906
Citations number
28
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
86
Issue
17
Year of publication
2001
Pages
3903 - 3906
Database
ISI
SICI code
0031-9007(20010423)86:17<3903:SSEFAS>2.0.ZU;2-R
Abstract
The spontaneous emission from an isolated semiconductor quantum dot state h as been coupled with high efficiency to a single, polarization-degenerate c avity mode. The InAs quantum dot is epitaxially formed and embedded in a pl anar epitaxial microcavity, which is processed into a post of submicron dia meter. The single, quantum dot spontaneous emission lifetime is reduced fro m the noncavity value of 1.3 ns to 280 Fs, resulting in a single-mode spont aneous emission coupling efficiency of 78%.