Influence of magnetic field on plasma sheath and electron temperature

Citation
B. Singha et al., Influence of magnetic field on plasma sheath and electron temperature, REV SCI INS, 72(5), 2001, pp. 2282-2287
Citations number
20
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
REVIEW OF SCIENTIFIC INSTRUMENTS
ISSN journal
00346748 → ACNP
Volume
72
Issue
5
Year of publication
2001
Pages
2282 - 2287
Database
ISI
SICI code
0034-6748(200105)72:5<2282:IOMFOP>2.0.ZU;2-Z
Abstract
Experimental observation has been carried out to see the effect of magnetic field and grid biasing voltage in controlling the sheath thickness in a ma gnetized plasma system. The experiment is carried out in a stainless steel chamber which is divided into two regions by a mesh grid, via the source re gion and the diffused region. The characteristic behavior of the ion rich s heath formed across the grid under various conditions of the applied magnet ic field and grid biasing voltage has been investigated experimentally. It has been observed that at both conditions of increasing magnetic field and grid biasing voltage, sheath width expands in the source region, whereas in the diffused region, no such noticeable variation has been found. This stu dy has been accompanied by the measurement of the electron temperature in b oth regions of the chamber via the source region and the diffused region wi th the help of the Langmuir probe. Plasma is produced in the source region and it penetrates into the diffused region through the grid. It has been fo und that the electron temperature decreases with increasing magnetic field in the source region while kept at a constant grid biasing voltage. However , in the diffused region the opposite variation has been observed. The vari ation of electron temperature with grid biasing voltage in both regions is not very significant. (C) 2001 American Institute of Physics.