Influence of the sulfur vacancies on the electronic properties of In16Sn4S32

Citation
R. Dedryvere et al., Influence of the sulfur vacancies on the electronic properties of In16Sn4S32, SOLID ST SC, 3(3), 2001, pp. 267-274
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE SCIENCES
ISSN journal
12932558 → ACNP
Volume
3
Issue
3
Year of publication
2001
Pages
267 - 274
Database
ISI
SICI code
1293-2558(200103/04)3:3<267:IOTSVO>2.0.ZU;2-M
Abstract
High and low temperature forms of In,,Sn,S,, differ in color (black and ora nge-red, respectively) and lithium insertion properties. We have studied bo th forms by X-ray and neutron diffraction techniques and Sn-199 Mossbauer s pectroscopy. While diffraction techniques show no structural difference, Mo ssbauer spectra allow to differentiate both phases, as a consequence of the presence of Sn-II in the high-temperature form. We show from tight-binding calculations that both the differences in color and the tin oxidation stat es are related to the existence of sulfur vacancies in the local environmen t of the tin atoms. (C) 2001 Editions scientifiques ct medicales Elsevier S AS. All rights reserved.