Oxidation of Si(001)-2 x 1

Authors
Pi, TW Wen, JF Ouyang, CP Wu, RT Wertheim, GK
Citation
Tw. Pi et al., Oxidation of Si(001)-2 x 1, SURF SCI, 478(1-2), 2001, pp. L333-L338
Citations number
16
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
478
Issue
1-2
Year of publication
2001
Pages
L333 - L338
Database
ISI
SICI code
0039-6028(20010501)478:1-2<L333:OOSX1>2.0.ZU;2-7
Abstract
The high temperature oxidation of Si(001) produces a 13 Angstrom thick oxid e consisting of four or five layers with uniformly graded composition, rang ing from monovalent at the Si interface to quadrivalent at the surface. Onc e nucleated, the oxide layer rapidly reaches full thickness and then grows laterally, A few atomic layers of the underlying elemental Si are measurabl y perturbed by the sub-oxide overlayer. (C) 2001 Published by Elsevier Scie nce B.V.