Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard's law

Authors
Li, W Pessa, M Likonen, J
Citation
W. Li et al., Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard's law, APPL PHYS L, 78(19), 2001, pp. 2864-2866
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
19
Year of publication
2001
Pages
2864 - 2866
Database
ISI
SICI code
0003-6951(20010507)78:19<2864:LPIGEO>2.0.ZU;2-#
Abstract
The N content and lattice parameter of GaN(x)As(1-x)epilayers on GaAs (0 < x < 0.03) were determined by secondary ion mass spectroscopy and x-ray diff raction measurements, respectively. A significant deviation of the lattice parameter variation in GaNxAs1-x from Vegard's law between GaAs and cubic G aN was observed, which leads to overestimation of the nitrogen content by u p to 30% for x less than or equal to 2.5%. The physical origin of this nega tive deviation is discussed. (C) 2001 American Institute of Physics.